With the continuous development of new energy vehicles, high-speed railways, high-speed photoelectric sensors, and high-power lighting equipment, the semiconductor devices employed are handling increasingly higher power levels. This trend of rising voltages and currents poses new challenges for testing procedures.
With the continuous development of new energy vehicles, high-speed railways, high-speed photoelectric sensors, and high-power lighting equipment, the semiconductor devices employed are handling increasingly h···
Shenzhen Zhiyong Electronics Co., Ltd. is a national high-tech enterprise focused on professional electrical measurement instruments, and one of the leading domestic manufacturers with core know-how in high-frequency current probes. Its recognition as a national-level specialized and sophisticated “Little Giant” enterprise in 2023 reflects the company’s strong technical standing in electrical measurement.
As electric vehicles, photovoltaic inverters, and industrial power systems continue to scale, power semiconductor devices are rapidly moving from silicon-based platforms toward wide-bandgap materials such as SiC and GaN. These third-generation semiconductors offer higher switching frequency, lower conduction loss, and higher operating temperature, but they also impose stricter measurement requirements. Switching transitions can shrink to the nanosecond range, switching-loss calculations require greater precision, and current slew-rate tolerance may need to reach tens of kA/μs.
With the rapid evolution of power electronics, high-voltage differential probes have become indispensable measurement tools in modern electronic testing. As wide-bandgap semiconductor devices such as SiC and GaN are adopted more broadly, and as electric vehicles, renewable generation, and industrial drives continue to grow, the demand for accurate high-voltage and high-frequency measurement keeps increasing. Traditional single-ended probes suffer from severe common-mode interference, large measurement error, and significant safety risk when measuring floating signals, making them insufficient for many modern power-electronics applications.
The switching characteristics of power semiconductor devices directly determine the efficiency, power density, and reliability of power electronic systems. As third-generation semiconductor technologies represented by silicon carbide (SiC) and gallium nitride (GaN) continue to advance, device switching speeds are entering the nanosecond range, while dv/dt can exceed 50-100V/ns. This creates unprecedented challenges for switching characteristic testing. According to T/CASAS 033-2024, accurate switching measurements require instruments with high bandwidth, high common-mode rejection ratio, and low input capacitance.
Silicon carbide (SiC), as a representative third-generation semiconductor material, has demonstrated transformative advantages in power electronics because of its wide-bandgap characteristics. SiC MOSFET power devices offer high breakdown voltage, high switching frequency, and high operating temperature capability, making them core devices in new energy vehicles, photovoltaic power generation, rail transit, and smart grids. At the same time, the high-speed switching behavior of SiC devices has imposed far more stringent demands on test technology than traditional silicon devices.
Power Electronic Measurements Ltd (PEM), founded in 1991 and headquartered in the United Kingdom, is a market leader in Rogowski current sensing equipment. Through more than three decades of technical accumulation and innovation, PEM products have been exported to more than 35 countries worldwide and have built an outstanding reputation in the field of power electronics measurement.
